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MgO Magnetic Anisotropy - Crossref

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Last Updated: 06 February 2022

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Enhancing the interfacial perpendicular magnetic anisotropy and tunnel magnetoresistance by inserting an ultrathin LiF layer at an Fe/MgO interface

Abstract Persotropy is becoming increasingly significant in spintronics research, particularly for high-density magnetoresistive random access memories. Magnetic tunnel junction junctions are often used by PMAs caused by an Fe/MgO interface. The PMA generated at an Fe/MgO interface is widely used in magnetic tunnel junctions. The LiF/MgO bilayer tunneling barrier had a significant tunnel magnetoresistance effect, suggesting that a consistent spin-dependent tunneling process was maintained in the ultrathin LiF layer. We also found that the LiF/MgO bilayer tunneling barrier exhibited a significant tunnel magnetoresistance layer.

Source link: https://doi.org/10.1038/s41427-021-00350-8


Enhancement of perpendicular magnetic anisotropy and thermal stability in Co/Ni multilayers by MgO/Pt interfaces

By means of magnetron sputtering and perceptive magnetic anisotropy of the samples, using anomalous Hall effect, the samples can be grown by means of the anomalous Hall effect. The optimum sample with Pt underlayer was obtained as Pt/Co/Ni/Co/Pt with PMA in good results in early researches of Co/Ni multilayes, as in early Co/Ni multilayes. The sample's thermal stability is investigated in this paper by the Hall loop measurement of it after annealing. MgO/Pt underlayer samples are prepared, with the thickness of Pt being controlled at 2 nm and MgO ranging from 1 to 5 nm. Thus, the interlayer between amorphous insulation layer and metal layer is introduced to be used to raise the PMA of the sample for the powerful electron additive scattering. The Hc of the sample MgO/Pt/Co/Ni/Co/Pt is increasing with increasing MgO underlayer and hits the maximum value at 4 nm, while the rectangular degree is maintained, and the remanence ratio is also at 100%, and the RHall is up to 9% correspondingly. The result shows that the roughness of the Co/Ni multilayer has been greatly reduced, but the PMA of the Co/Ni multilayer has been boosted noticeably after the addition of 4 nm MgO. That of the control without MgO samples is 1. 5 times higher, and it is 3. 5 times greater than the sample with Pt underlayer only.

Source link: https://doi.org/10.7498/aps.64.197501


Influence of Mo capping layer on magnetic anisotropy of MgO/CoFeB/Mo

The effect of a Mo capping layer on magnetic anisotropy of MgO/CoFeB/Mo of varying thickness is investigated in this paper. It has been discovered that the Mo capping layer has more saturated magnetic moments than the Ta capping layer. The direction of the external magnetic field has a major influence on magnetic anisotropy. Increased the annealing temperature helps the sample remain in the saturated state under a small magnetic field vertical to the plane, and converts IMA weak and transform into PMA. The sample's saturation magnetic moment can be affected by the variation of the Mo capping layer thickness. When the Mo layer is between 1. 2 and 1. 6 nm, it shows a dramatic decline, but after that, it becomes more stable with the Mo layer thickening. When the Mo capping layer is 1 nm or less, an IMA is visible, but PMA is on view when the Mo cap layer is between 1. 2 and 5 nm.

Source link: https://doi.org/10.7498/aps.64.247504


Large enhanced perpendicular magnetic anisotropy and thermal stability in Ta/CoFeB/MgO films with excess boron

The finding of perceptive magnetic anisotropy in Ta/CoFeB/MgO film and the demonstration of high-performance perpendicular magnetic tunnel junctions based on this material structure have accelerated the development of the next-generation high-density non-volatile memories and other spintronic devices. When the CoFeB layer is no thicker than 1. 2 nm, the Ta/CoFeB/MgO structure annealed at 573 K shows perceptible magnetization at a maximum B content of 20% for the CoFeB layer. With B content decreasing to 10%, it has been discovered that PMA is only in the samples with a 0. 8 nm CoFeB layer under the same annealing condition. With the CoFeB layer as thick as 1. 2 nm and slightly improved thermal stability, the Ta/CoFeB/MgO structure annealed at 573 K shows PMA with PMA increases from 20% to 30 percent. In the samples with the CoFeB thickness up to 1. 5 nm, MgO/CoFeB/Ta system with 30% B shows the optimal annealing temperature of about 623 K, which Ks reaches 2. 010-3Jm-2 and PMA is realized. The present results show that an excess B layer of CoFeB will effectively enhance the Ta/CoFeB/MgO system's perceptible magnetic properties and thermal stability, and that optimizing the spintronic systems based on the perceptively magnetized CoFeB/MgO system would improve the Ta/CoFeB/MgO system's perceptive magnetic properties and thermal stability, and that optimizing the spintronic devices based on the Perpetrol magnetized.

Source link: https://doi.org/10.7498/aps.66.017502

* Please keep in mind that all text is summarized by machine, we do not bear any responsibility, and you should always check original source before taking any actions

* Please keep in mind that all text is summarized by machine, we do not bear any responsibility, and you should always check original source before taking any actions