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While turbulence plays a large role in deposition by various methods and contribution of these processes to deposition velocities that are not particularly high, turbulence is underrepresented in these processes. We present a series of 3-D turbulence-dependent resistance formulations for particle dry deposition simulation and intercompare the results of new resistance formulations with those obtained from using the existing formulations and measured dry deposition velocity. When compared to previous plans, the incorporation of new turbulence parameters either introduced or increased diurnal consistency to sedimentation rate and collection efficiency metrics, making the new plans predict higher deposition values during daytime and nighttime. This information may help increase the effectiveness of dry deposition methods for better estimation of particle dry deposition and fostering a community dry deposition modeling system for use in regional and global models.
Source link: https://zenodo.org/record/5874973
The production of as-deposited hydrogen-free silicon carbide and SiC films, as well as oxygen thin films, is made possible by a vapor deposition process. An oxygen source is added to the reaction zone of the SiC:O films to dope the SiC films with oxygen. Any carbon atom in the silahydrocarbon precursors is bound to two silicon atoms, with each silicon atom being further attached to two or more hydrogen atoms.
Source link: https://zenodo.org/record/6875402
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