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Engineering and analysis of cavity-emitter coupling are two of the most challenging aspects of designing scalable quantum network nodes. Within the 100 nm^3 cavity mode volume, photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon monovacancy defect formation. At the V _Si^- formation sites, we also find an exponential decline in fluence lifetimes as a result of the cavity amorphization threshold, and a single-shot local annealing of the intrinsic background defects. This real-time in-situ method of localized defect formation, as well as the demonstration of cavity-integrated defect spins, is a significant step toward quantum networking coupling in engineering cavity-emitter coupling for quantum networking.
Source link: https://arxiv.org/abs/2210.00177v2
Broad area laser diodes are popular for their high optical quality that they can produce. We describe a way to vastly enhance the spatial coherence of a high-power wide-area diode laser by embedding it in an external cavity that is mode selective.
Source link: https://arxiv.org/abs/2208.12303v1
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