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If electrons reach a temperature comparable to the LO phonon frequency, the polar scattering can limit electron mobility. Gate insulators with a high relative dielectric constant must be concerned about the remote LO coupling. The quasi-2DEG is produced by evaporating cesium atoms on the surface of indium selenide at low temperature and in ultrahigh vacuum conditions. The choice of polar materials is influenced by the fact that InSe is one of the finest van der Waals structures for the manufacture of FET devices. We find that, hot electrons in quasi-2DEGs, exhibit a remote coupling to polar optical phonons in continuous form, which is in accordance with high electronic density. Nevertheless, the experimental cooling rate can be reproduced by 3D electron static screening of bulk phonons. electrons in the accumulation layers or 2D conductors at the interface with a polar medium have been exposed to 3D dissipation channels, according to this research.
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