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The integrated MS unit cell includes a fixed-thickness FR4 dielectric substrate and a variable air-thickness substrate. The simulation results indicate that the tested MS absorber is stable across a wide angular range of both normal and oblique incidences. The experimental results show that the new MS absorber can be achieved an absorption greater than 90% across the frequency bandwagons of 1. 89 GHz to 6. 85 GHz with a relative bandwidth of 113%, which is in agreement with simulation results. Hence, the latest MS absorber may be more suitable for RF energy recovery or wireless power transfer applications.
Source link: https://doi.org/10.3390/electronics11131986
In this essay, a new insight into the KNOWM's physical memristoru2019s behavior is presented. The KNOWM's intrinsic feature allows it to be used as a nonlinear resistor in chaotic circuits. This memristor has also been shown to be behaving like a static nonlinear resistor under certain conditions. Consequently, the KNOWM memristor is used as a static nonlinear resistor in the well-known chaotic Shinriki oscillator for the first time. Interesting phenomena related to chaos theory have been observed. In addition, the period-doubling route to chaos and crisis phenomena are also present.
Source link: https://doi.org/10.3390/electronics11121920
Resistor matrixes are widely used in active RC filters as well as self-tuning schemes. It's possible to change many settings of filter u2013 cut-off frequency, gain, and quality of filter using self-tuning devices for active RC filters. Both integrated circuit process variations and temperature change are compensating for the Proposed resistor matrix structure, which compensates both integrated circuit process variations and temperature change. Proposed resistor matrix is built using 0. 18 u03bcm TSMC technology node and investigated using Cadence Virtuoso software.
Source link: https://doi.org/10.3846/mla.2020.11419
We presented Pavlovian conditioning based on the artificial synapse architecture of one-resistor/one-resistor's one-transistor/one-resistor's one-resistor, as a variable resistance and an N-MOS transistor in this research. Moreover, the temporal relationship between the conditioned and unconditioned stimuli was also established, in which the memory of associative learning increased with the onset of two stimuli.
Source link: https://doi.org/10.1063/5.0086867
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